14 September 2001 Advanced F2-lasers for 157-nm lithography
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Abstract
According to the SIA-Roadmap, the 157 nm wavelength of the F2 laser is the most likely solution to extend the optical lithography for chip production from the critical dimensions of 100 nm down to the 50 nm node. The introduction of the 157 nm lithography for high volume mass production requires high power, high repetition rate F2 lasers operating in the power range of more than 40 W or at repetition rates of more than 4 kHz. These leading specifications are combined with other challenging laser specifications on dose stability and bandwidth which must be realized within a very aggressive time line for the introduction of the full-field scanner systems in the year 2003. According to this roadmap of the tool suppliers Lambda Physik has now introduced a 2 kHz lithography-grade F2 laser F2020 for further pilot scanner systems. In this report we present basic performance data of this single line 2 kHz F2 laser and some typical results on key laser parameters which had been measured with new and improved metrology equipment. We demonstrate for the first time precise measurements on the correlation of the natural bandwidth versus pressure which had been performed with an ultrahigh resolution VUV spectrometer. In addition a new compact and transportable high resolution VUV spectrometer was used for analyses of spectral purity and line suppression ratio of the laser emission. The experimental setup and result of an absolute calibration of a power meter, for the first time directly performed at the true 157 nm wavelength, are presented.
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Klaus Vogler, Klaus Vogler, Ingo Klaft, Ingo Klaft, Frank Voss, Frank Voss, Igor Bragin, Igor Bragin, Elko Bergmann, Elko Bergmann, Tamas Nagy, Tamas Nagy, Norbert Niemoeller, Norbert Niemoeller, Rainer Paetzel, Rainer Paetzel, Sergei V. Govorkov, Sergei V. Govorkov, Gongxue Hua, Gongxue Hua, "Advanced F2-lasers for 157-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435652; https://doi.org/10.1117/12.435652
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