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14 September 2001 Application of attenuated phase-shifting masks to sub-130-nm lithography
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In this paper, the performance of 6% and 18% attenuated phase-shifting masks (PSM) are investigated to assess their capabilities of printing O.12tm and O.lOjim polysilicon gates, using a 248nm scanner with a high NA of 0.68. The effect of off-axis illumination on process enhancement is also investigated. Simulations were done using PROLITHI3D Version 6.1.2. Experimentation was carried out using test masks with various line pitches. The effect of optical proximity correction (OPC) to enhance the overlapping process windows for 0. 12pm and O.1Otm was also studied.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chee Kiong Koo, Lay Cheng Choo, Qunying Lin, Shyue Seng Tan, Hui Jun Lee, Siu Chung Tam, and Alex K. See "Application of attenuated phase-shifting masks to sub-130-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001);

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