Asymmetric biasing for subgrid pattern adjustment

Alfred K. K. Wong; Lars W. Liebmann

doi:10.1117/12.435697

14 September 2001 Asymmetric biasing for subgrid pattern adjustment

Alfred K. K. Wong, Lars W. Liebmann

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435697
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The location of a printed edge can be controlled to a fineness that is two orders of magnitude smaller than the design grid, if a slight displacement of the pattern can be tolerated. The essence of this asymmetric subgrid biasing technique is the crenelation of two edges of a pattern into different periods. Fractional arithmetic results in a bias increment that much smaller than that can be achieved with halftone biasing. For a design grid of 20 nm (1X), and an exposure system with (lambda) equals 248 nm, NA equals 0.68, and (sigma) equals 0.8, the bias increment can be as small as 0.22 nm.

Citation Download Citation

Alfred K. K. Wong and Lars W. Liebmann "Asymmetric biasing for subgrid pattern adjustment", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435697

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