14 September 2001 CD control of low-k-factor step-and-scan lithography
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Abstract
On-product or 'output' dose and contrast variations (the temporal and spatial changes to image intensity and modulation captured in the developed wafer pattern) are the dominant contributors to across-field and across-wafer critical dimension (CD) variation. While the 'input' dose and focus degrees of freedom of step-and-scan tools offer the potential for improved CD control, its realization at low k1 depends on our ability to adjust tool settings such that the output contrast is maximized and the output dose is clamped to a desired operating point. Our paper describes our application of output dose and contrast, derived from the measurement of on-product targets, to the CD characterization of step-and- scan lithography at 150 nm ground rules and below. We demonstrate the means for simultaneous input dose and focus correction and quantify the consequent benefit to CD control.
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Christopher P. Ausschnitt, Christopher P. Ausschnitt, Christopher J. Progler, Christopher J. Progler, William Chu, William Chu, } "CD control of low-k-factor step-and-scan lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435729; https://doi.org/10.1117/12.435729
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