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14 September 2001 Comparison study on mask error factor in 100-nm ArF and KrF lithography
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Abstract
In this paper, we will discuss feasibility of KrF and ArF technology to overcome 100 nm node. Simulation and experiment for this study were performed in view of mask error factor. Lithography simulation was done by Hyundai OPC Simulation Tool (HOST) based on diffused aerial image model (DAIM). In the case of k1 factor below 0.33, the photolithography process has no margin because of higher MEF value. Therefore, numerical aperture for KrF and ArF need to have over 0.95 and 0.75 respectively for 100 nm node. Actually, it is impossible to make exposure system with 0.95 NA. The mask error factor gave severe influence on the lithographic performance. To overcome 100 nm node, ArF lithography technology is more appropriate than KrF lithography considering MEF concept.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Seung Eom, Yoon-Suk Hyun, Cheol-Kyun Kim, Cheol-Kyu Bok, and Ki-Soo Shin "Comparison study on mask error factor in 100-nm ArF and KrF lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435787
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