Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node

Susumu Mori

doi:10.1117/12.435762

14 September 2001 Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node

Susumu Mori

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435762
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

The higher numerical aperture ArF scanning exposure tool was developed with completely new platform for further 100nm technology node. This new tool is designed and manufactured with wave front aberration controlled projection lens by using new phase measurement interferometer system, enhanced illuminator structure technology to optimize many various conditions in device production, higher power light source ArF excimer laser and higher speed stages in order to achieve enough required productivity of devices in this node. Not only for the run rate but for the finer accuracy in stage systems and focus control system were involved in this new platform. The actual imaging and accuracy performance will be shown and discussed.

Citation Download Citation

Susumu Mori "Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435762

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