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14 September 2001 Impact of illumination coherence and polarization on the imaging of attenuated phase-shift masks
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Abstract
Attenuated phase shift masks (PSM) have been widely used in photolithography to enhance resolution and process margin. The advantage of attenuated PSM is further enhanced when it is combined with off-axis illumination (OAI) and optical proximity correction (OPC). This combination results in better performance than when attenuated PSM or OAI is used separately. However, the performance of isolated features is still a limiting factor to improve process margin. One result of such resolution enhancement techniques is conjunction with high numerical aperture imaging systems is an increase in the angles of the light used to form the images. Polarization mismatching among interacting beams becomes worse as the incident angle increases. In this paper we use contact hole patterning as an example to demonstrate how polarization plays a role with different partial coherence factors. PROLITH/3D simulation was used to compare and explain experimental results.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Mark Ma and Chris A. Mack "Impact of illumination coherence and polarization on the imaging of attenuated phase-shift masks", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435694; https://doi.org/10.1117/12.435694
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