14 September 2001 Investigation of attenuated phase-shifting mask material for 157-nm lithography
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This work was done to identify viable materials for attenuated phase-shift masks (Att-PSMs) for use with 157-nm lithography. Earlier studies proposed Si-based and Zr-based materials as potential contenders for use as Att-PSMs for 157-nm lithography. This report proposes new Ta-based materials for Att-PSMs, and evaluates the irradiation durability of Ta-group bilayer films (Ta and TaSiO) and Si film to F2 laser light. The Ta-based mask is a bilayer structure consisting of an absorption film (AF) layer and a transparent film (TF) layer. Ta is used for the AF, while TaSiO is used for the TF. The Cr of the Si-based mask is used for the AF layer. The TF layer is etched substrate. The transmittance of the Cr-based mask is readily controlled by the thickness of the Cr layer. The phase angle is controlled by the depth of etching substrate. It was found that the Ta- based bilayer films, and the Cr-based films exhibit good irradiation durability for irradiation to 157-nm light. We demonstrated that the Ta-based and Cr-based Att-PSMs are practical for use in 157-nm lithography.
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Toshio Onodera, Toshio Onodera, Takahiro Matsuo, Takahiro Matsuo, Toshiro Itani, Toshiro Itani, Hiroaki Morimoto, Hiroaki Morimoto, "Investigation of attenuated phase-shifting mask material for 157-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435642; https://doi.org/10.1117/12.435642

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