14 September 2001 Investigation of attenuated phase-shifting mask material for 157-nm lithography
Author Affiliations +
Abstract
This work was done to identify viable materials for attenuated phase-shift masks (Att-PSMs) for use with 157-nm lithography. Earlier studies proposed Si-based and Zr-based materials as potential contenders for use as Att-PSMs for 157-nm lithography. This report proposes new Ta-based materials for Att-PSMs, and evaluates the irradiation durability of Ta-group bilayer films (Ta and TaSiO) and Si film to F2 laser light. The Ta-based mask is a bilayer structure consisting of an absorption film (AF) layer and a transparent film (TF) layer. Ta is used for the AF, while TaSiO is used for the TF. The Cr of the Si-based mask is used for the AF layer. The TF layer is etched substrate. The transmittance of the Cr-based mask is readily controlled by the thickness of the Cr layer. The phase angle is controlled by the depth of etching substrate. It was found that the Ta- based bilayer films, and the Cr-based films exhibit good irradiation durability for irradiation to 157-nm light. We demonstrated that the Ta-based and Cr-based Att-PSMs are practical for use in 157-nm lithography.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Onodera, Toshio Onodera, Takahiro Matsuo, Takahiro Matsuo, Toshiro Itani, Toshiro Itani, Hiroaki Morimoto, Hiroaki Morimoto, "Investigation of attenuated phase-shifting mask material for 157-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435642; https://doi.org/10.1117/12.435642
PROCEEDINGS
11 PAGES


SHARE
Back to Top