14 September 2001 Lens aberration measurement and analysis using a novel pattern
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Abstract
Lens aberration of the exposure tool causes pattern deformation and position shift. As design rule shrinks, the ratio of printed feature size to applied wavelength for optical lithography is driven inexorably toward resolution limit. In this study, we devised an efficient method to evaluate lens aberration using multi-ring pattern on an attenuated phase-shift mask. Adoption of multi-ring pattern can cut down measurement time and improve measurement repeatability. These patterns are uniformly distributed through entire field in 7 by 7 manner. Lens aberration was evaluated by multi-ring pattern array under conventional or off-axis illumination with KrF stepper of NA 0.65. Multi-ring critical dimension (CD) data was discussed together with the issue of lens aberration such as coma, astigmatism, field curvature, etc. We can apply this new measurement technique to select better lens system efficiently. multi-ring, field size, pattern deformation
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Byung-Ho Nam, Byung-Ho Nam, Byeong-Ho Cho, Byeong-Ho Cho, Jong O Park, Jong O Park, Dong-Seok Kim, Dong-Seok Kim, SungJin Baek, SungJin Baek, JongHo Jeong, JongHo Jeong, ByungSub Nam, ByungSub Nam, Young Ju Hwang, Young Ju Hwang, Young Jin Song, Young Jin Song, } "Lens aberration measurement and analysis using a novel pattern", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435665; https://doi.org/10.1117/12.435665
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