14 September 2001 Mask considerations for manufacturing assist features
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Proceedings Volume 4346, Optical Microlithography XIV; (2001); doi: 10.1117/12.435681
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
Assist features are recently employed in high density devices. But the application seems to be burdening to mask manufacturers. In this paper, considerations for making masks bearing assist features are discussed. A mask grid size, minimum resolution, CD linearity, pattern fidelity, and mask inspectability are among those considerations. For a 0.13 micrometer node, the grid size <EQ 5 nm (4X) is recommended according to our simulation. A high acceleration voltage (50 keV) e-beam writer is found to be a good tool for 0.26 micrometer (4X) assist features necessary for 0.13 micrometer node. A currently available inspection machine should give a good potential to detect defects on a 0.18 micrometer (4X) assist feature bearing mask.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ji-Hyeon Choi, Won-Il Cho, Byeongsoo Kim, Seung-Hune Yang, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn, "Mask considerations for manufacturing assist features", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435681; https://doi.org/10.1117/12.435681
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KEYWORDS
Photomasks

Inspection

Optical proximity correction

Manufacturing

Critical dimension metrology

Semiconducting wafers

Transmittance

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