14 September 2001 Mask considerations for manufacturing assist features
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Abstract
Assist features are recently employed in high density devices. But the application seems to be burdening to mask manufacturers. In this paper, considerations for making masks bearing assist features are discussed. A mask grid size, minimum resolution, CD linearity, pattern fidelity, and mask inspectability are among those considerations. For a 0.13 micrometer node, the grid size <EQ 5 nm (4X) is recommended according to our simulation. A high acceleration voltage (50 keV) e-beam writer is found to be a good tool for 0.26 micrometer (4X) assist features necessary for 0.13 micrometer node. A currently available inspection machine should give a good potential to detect defects on a 0.18 micrometer (4X) assist feature bearing mask.
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Ji-Hyeon Choi, Won-Il Cho, Byeongsoo Kim, Seung-Hune Yang, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn, "Mask considerations for manufacturing assist features", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435681; https://doi.org/10.1117/12.435681
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