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14 September 2001 Patterning of random interconnect using double exposure of strong-type PSMs
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Abstract
This paper discusses a new PSM algorithm to generate a pair of sub-mask patterns to achieve 2-D random patterns by double exposure. Test layout was automatically decomposed into two sub-PSMs with about 190 steps of geometrical operations including simple OPCs. Both simulation and experiments showed that 0.28-micrometer pitch random wiring is achieved with our method, suggesting local wiring at 70- (50-) nm node logic LSIs combined with ArF (F2) exposure tools.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Fukuda and Takuya Hagiwara "Patterning of random interconnect using double exposure of strong-type PSMs", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435767
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