14 September 2001 Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask
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Proceedings Volume 4346, Optical Microlithography XIV; (2001); doi: 10.1117/12.435783
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
To reduce mask error enhancement factor (MEEF), we have developed the new type half-tone phase shift mask (HTPSM) in which transparent regions are surrounded by opaque rims. We evaluated the imaging performance of contact hole patterns including the MEEF and the depth of focus (DOF). Using this new method, we obtained about 2.0 MEEF and 0.7-micrometers DOF for 180-nm isolated hole, which was much better than that in the conventional mask such as binary mask or HTPSM (the MEEF more than 3). The advantage of our method was that it was possible to attain both the MEEF reduction and the DOF enhancement by the optimization of mask hole size and rim width. Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for attenuating side-peak effect.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Matsuura, Takayuki Uchiyama, Takeo Hashimoto, "Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435783; https://doi.org/10.1117/12.435783


Critical dimension metrology

Binary data


Semiconducting wafers

Phase shifts

Mask making

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