Simplified models for edge transitions in rigorous mask modeling

Konstantinos Adam; Andrew R. Neureuther

doi:10.1117/12.435733

14 September 2001 Simplified models for edge transitions in rigorous mask modeling

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435733
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A new method is described for very accurate and rapid 3D simulation of alternating phase-shifting masks. This method for arbitrary 2D mask patterns is based on scalar imaging theory and is therefore much faster (200X or more) than rigorous 3D electromagnetic simulation. It is shown that an alternating phase-shifting mask can be decomposed into single openings and, subsequently, accurate scalar models for the single openings can be combined to give the complete mask result. The Fourier domain is found to be most suitable for the development of these accurate scalar models. A methodology for observing and modeling cross-talk between adjacent features in a phase-shift mask is introduced. The amount of cross-talk is found to be insignificant for mask technologies that are shallower than 90 degree(s)/270 degree(s).

Citation Download Citation

Konstantinos Adam and Andrew R. Neureuther "Simplified models for edge transitions in rigorous mask modeling", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435733

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