14 September 2001 Trench pattern lithography for 0.13- and 0.10-μm logic devices at 248-nm and 193-nm wavelengths
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Abstract
In this paper, logic device patterning of 0.16-micrometer trenches for the 0.13-micrometer node using 248-nm light and 0.13-micrometer trenches for the 0.10-micrometer node using 193-nm light is investigated. Severe proximity effect through all pitches and small depth of focus for isolated trenches bring great challenges. To produce manufacture-worthy process windows, lithographic techniques such as optical proximity correction, annular illumination, sub-resolution assist features, and attenuated phase-shift mask are considered. No prominent performance gain is achieved in the aforementioned combination if full-pitch-range performance is required. However, manufacture-worthy 0.5-micrometer depth of focus can be obtained through all pitches by replacing annular illumination with quadrupole illumination while retaining sub- resolution assist features and optical proximity correction, even without having to resort to attenuated phase-shifting mask. We also observe that attenuated phase-shift mask or dipole illumination improves depth of focus and photoresist profile of dense patterns only in the cases studied.
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Ying-Ying Wang, Hua Tai Lin, Shinn Sheng Yu, Chun-Kuang Chen, Yao Ching Ku, Anthony Yen, and Burn Jeng Lin "Trench pattern lithography for 0.13- and 0.10-μm logic devices at 248-nm and 193-nm wavelengths", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435728; https://doi.org/10.1117/12.435728
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