14 September 2001 Trench warfare!: fitting photons for fine-feature fabrication
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Proceedings Volume 4346, Optical Microlithography XIV; (2001); doi: 10.1117/12.435714
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
The challenge is developing imaging solutions for 180 nm trench lithography that provides maximum overlapping process windows for imaging through pitch. The issue has been addressed first; through simulation to optimize illumination, secondly; with experimentation and the collection of data through dose and focus for a number of pitch sequences with several illumination conditions for each CD. Our problem is how to handle the comparison of many ED windows and still be able to determine which set of conditions provide the best result, the POP factor (Pitch Optimization Process) was determined. The authors will review the POP factor to demonstrate a possible new technique in the calculation of multiple pitch ED windows.
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Jan Pieter Kuijten, Will Conley, Robert John Socha, Stephan van de Goor, Stephen Hsu, Dave Smith, Marc Oliveras, Kirk Strozenski, "Trench warfare!: fitting photons for fine-feature fabrication", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435714; http://dx.doi.org/10.1117/12.435714
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KEYWORDS
Optical proximity correction

Semiconducting wafers

Electroluminescence

Imaging systems

Lithographic illumination

Lithography

Reticles

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