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14 September 2001 Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography
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Abstract
We have developed a 4-kHz ArF excimer laser with ultra-narrow bandwidth, which is applicable to high-NA scanners for sub-0.13-micrometers microlithography. In this paper, we describe a 4-kHz ArF excimer laser for mass production: the model G40A, which has an output power of 20 W and energy dose stability of less than +/- 0.3% (20-ms window) at 4 kHz. This dose stability is comparable to the performance of an existing 2-kHz ArF excimer laser, the model G20A. The new laser also has the following specifications: a long pulse duration of over 40 ns, spectral bandwidth of less than 0.35 pm (FWHM), and spectral purity of less than 1.0 pm (95%). These characteristics are better than those of the G20A. A lifetime test of over 7 billion pulses has been conducted at 4-kHz operation. The new laser has maintained an energy dose stability of less than +/- 0.3% (20-ms windows) and demonstrated performance suitable for mass production even after over 7 billion pulses.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Saito, Takashi Matsunaga, Ken-ichi Mitsuhashi, Katsutomo Terashima, Takeshi Ohta, Akifumi Tada, Takanobu Ishihara, Masaya Yoshino, Hiroaki Tsushima, Tatsuo Enami, Hitoshi Tomaru, and Tatsushi Igarashi "Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435658
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