1 February 2001 3D model of epitaxial growth on {111} surfaces of diamond-like crystals
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Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417642
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
3D Monte Carlo model of epitaxial growth and sublimation process on {111} surfaces of diamond like crystals was developed. Using original rapid algorithm we could simulate crystal fragments with hundreds atomic layers in the depth. One monolayer could contain up to 105 atoms. The model permits voids and overhanging formation. Arbitrary initial surface relief could be prescribed. The results of simulation are the computer film, demonstrating evolution of surface morphology, and data showing the degree of surface roughness. This model was successfully applied for simulation of homoepitaxy on (111) porous silicon surfaces.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor G. Neizestny, Igor G. Neizestny, Alexej V. Zverev, Alexej V. Zverev, Natalia L. Shwartz, Natalia L. Shwartz, Zoja Sh. Yanovitskaya, Zoja Sh. Yanovitskaya, } "3D model of epitaxial growth on {111} surfaces of diamond-like crystals", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417642; https://doi.org/10.1117/12.417642
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