1 February 2001 Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution
Author Affiliations +
Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417658
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
The diffusion processes in silicon carbide under Al+ and N+ ion implantation and subsequent annealing have been investigated. The influence of an internal stress field due to point defect clusters has been taken into account. The clusters of interstitials, ions, and impurities have been created during irradiation. The compression stress field due to these complexes has decreased the diffusion of interstitials. The defect profiles have been calculated which have been in good agreement with experimental RBS/C results.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter V. Rybin, Peter V. Rybin, Dmitri V. Kulikov, Dmitri V. Kulikov, Yuri V. Trushin, Yuri V. Trushin, J. Petzoldt, J. Petzoldt, } "Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417658; https://doi.org/10.1117/12.417658
PROCEEDINGS
7 PAGES


SHARE
Back to Top