Degradation of Isc and the pattern of degradation of a-Si:H

Yeshitila Gebremichael; Ilia M. Kachirski

doi:10.1117/12.417635

1 February 2001 Degradation of I_sc and the pattern of degradation of a-Si:H

Yeshitila Gebremichael, Ilia M. Kachirski

Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417635
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation

Abstract

The pattern of light induced degradation, i.e. the degree of degradation of a-Si:H pinpin solar cells parameters, was studied on different i-layer thickness using high intensity (approximately 10 AM 1.5) illumination. It was found that stacked cells do not show a uniform degradation pattern as in the case of single junction solar cells. In particular, the degradation in shortcircuit current I_sc of the stacked cells shows a big difference for thick (approximately 500 nm) and thin (approximately 400 nm) pinpin cells. It was found that the degradation of the stacked cells with thick bottom layers exhibit a degradation pattern similar to that of single junction cells, i.e. the degradation in efficiency comes from the fill factor and the short circuit current, while open circuit voltage being degraded slightly. The degradation in short circuit current of cells with thin bottom layers is negligibly small.

Citation Download Citation

Yeshitila Gebremichael and Ilia M. Kachirski "Degradation of I_sc and the pattern of degradation of a-Si:H", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417635

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