1 February 2001 Kinetics of point defects and amorphization processes in irradiated solid films
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Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417660
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
A theoretical model is suggested which describes the evolution of ensembles of point defects that give rise to solid state amorphization in initially crystalline films under irradiation. A kinetic equation for the density of point defects (vacancies and interstitial atoms) in irradiated solid films is proposed and solved with the assumption that the effect of ion implantation on the amorphization is negligible. In the framework of the proposed model, the temperature dependence of the dose-to-amorphization is calculated and compared with the corresponding experimental data [H. Abe et al, Nucl.Instrum. Meth. Phys.Res. B 127/128, 170 - 175 (1997)].
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Ilya A. Ovid'ko, Ilya A. Ovid'ko, Anna B. Reizis, Anna B. Reizis, } "Kinetics of point defects and amorphization processes in irradiated solid films", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417660; https://doi.org/10.1117/12.417660
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