1 February 2001 Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
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Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417662
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.
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Maris Knite, Maris Knite, Leonids Shebanov, Leonids Shebanov, } "Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417662; https://doi.org/10.1117/12.417662
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