1 February 2001 Trapping centers in amorphous 2,4,7-trinitro--9--fluorenone thin films
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Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417636
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
The effect of trapping centers on the conductivity of amorphous 2,4,7-trinitro-nine-fluorenone (a-TNF) was investigated by space charge limited current (SCLC), thermally stimulated current (TSC), and transient photoconductivity methods. It is found that electron traps in a-TNF have a smoothly varying distribution centered at about Et equals 0.29 +/- 0.04 eV with a dispersion parameter (sigma) equals 0.11 +/- 0.02 eV. The true activation energy at room temperature is Ea equals 0.45 +/- 0.03 eV. The zero-field extrapolated activation energy is Eao equals 0.65 +/- 0.02 eV. It was suggested that the transport of charge carriers in a-TNF was controlled by traps. The concentration of traps and drift mobility of electrons was evaluated.
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Ilia M. Kachirski, Ilia M. Kachirski, } "Trapping centers in amorphous 2,4,7-trinitro--9--fluorenone thin films", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); doi: 10.1117/12.417636; https://doi.org/10.1117/12.417636
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