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9 April 2001 130-nm node mask development
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425102
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small- pattern fidelity is one of the most challenging tasks in maskmaking. The research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD) uniformity, CD linearity, small- feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBESTM 5500 systems, all experiments are performed with ZEP 7000 resist, 10 (mu) C/cm2 dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). These results are instructive for improved 130 nm node lithography and 180 nm node productivity.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan M. Chabala, Suzanne Weaver, David W. Alexander, Maiying Lu, Nam-Wook Kim, and Damon M. Cole "130-nm node mask development", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425102
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