9 April 2001 Comparison of linewidth measurements on COG masks
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425082
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
We report on comparison measurements for linewidths of test structures on chrome on glass photomasks by means of different types of light optical transmission microscopy and low voltage scanning electron microscopy (LVSEM). The investigated linewidth or critical dimension range was chosen to be between 0.3 micrometers and 5 micrometers on isolated and dense as well as clear and opaque line structures. After offset correction of the commercial i-line CD metrology tool we observed overall agreement between the results from light optical microscopy and the results from the LVSEM in the range of 20 nm. No significant polarization dependencies of transmitted light results were observed. The edge detection algorithms used for extraction of edge position from the measured profiles will be discussed for the types of instruments involved.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Bosse, Werner Mirande, Carl G. Frase, Hans-Juergen Brueck, Sigrid Lehnigk, "Comparison of linewidth measurements on COG masks", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425082; https://doi.org/10.1117/12.425082
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