9 April 2001 Defect inspection of IPL stencil masks with a KLA 351 tool
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425095
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
Optical defect inspection is the standard technique that is currently used for mask defect inspection. In this paper it will be discussed whether this inspection technique is also applicable for ion projection lithography stencil masks. Silicon stencil masks consist of a silicon membrane with 3 micrometers thickness. The patterns are stencil holes and trenches in the membrane. So, the geometry of stencil masks is completely different from chromium or phase shift masks. The key question is if the high aspect ratio is a fundamental problem for optical inspection. A defect test mask has been designed and manufactured. This mask contains 13 defect types over a whole range of sizes down to 0.2 micrometers . To inspect the stencil mask, the inspection parameter set has been adjusted. Most of the defects have been detected successfully down to about the same level as for chromium masks. Pinholes, which represent the worst-case situation due to the significantly reduced transmitted intensity, have been detected down to 0.7 micrometers .
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albrecht Ehrmann, Albrecht Ehrmann, Annika Elsner, Annika Elsner, Rene Redemann, Rene Redemann, "Defect inspection of IPL stencil masks with a KLA 351 tool", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425095; https://doi.org/10.1117/12.425095
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