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9 April 2001 Doubly exposed patterning characteristics using two alternating phase-shift masks
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425100
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
Double exposure using mutually one-pitch-step shifted alt. PSM's is proposed to eliminate the (Delta) CD and CD reversal. By doubly exposing mutually one-pitch-step shifted alt. PSM's, the (Delta) CD and CD reversal is observed to disappear. The phase margin of 8 degree(s) and the undercut margin of 40 nm are obtained for 1.2 micrometers DOF margin. Comparing with alt. PSM, double exposure using mutually one-pitch-step shifted alt. PSM has larger margin in undercut and phase, which allows mask to be manufactured easily. The alignment tolerance is calculated to be 75 nm which is enough compared with recent lithographic systems. By doubly exposing mutually one-pitch-step shifted alt. PSM, the equal CD's of 141 nm and 142 nm were observed. Our double exposing technique proved to have large advantages over alt. PSM not only in removal of (Delta) CD and CD reversal, but also in the phase and undercut margin.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Woo Lee, In-Gyun Shin, Yonghoon Kim, Seong-Woon Choi, Woo-Sung Han, Hee-Sun Yoon, and Jung-Min Sohn "Doubly exposed patterning characteristics using two alternating phase-shift masks", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425100
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