9 April 2001 Investigation of quartz etch rate uniformity for alternating phase-shift mask applications utilizing a next-generation ICP source
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425099
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
As critical dimensions and exposure wavelengths approach the physical limitations of optical lithography, the use of newer techniques such as Phase Shift Photomask Technologies become necessary to extend the viability of DUV lithography tools. Alternating Phase Shift Mask technologies are challenging the capabilities of current quartz dry etch processes; as this phase shift technique is achieved by the precise removal of quartz, the need for ever improving phase shift uniformity across the photomask surface requires extremely uniform quartz etch depth. To this end, a Next Generation ICP (Inductively Coupled Plasma) hardware configuration has been adopted. In this article, the quartz etch parameter space of this new ICP source is explored. Finally, process results including, quartz roughness, sidewall profile, and most importantly quartz etch rate uniformity will be presented.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Strawn, Chris Constantine, Jason Plumhoff, Russell J. Westerman, "Investigation of quartz etch rate uniformity for alternating phase-shift mask applications utilizing a next-generation ICP source", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425099; https://doi.org/10.1117/12.425099
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