9 April 2001 Mask manufacturing contribution on 248-nm and 193-nm lithography performances
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001); doi: 10.1117/12.425081
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
In this study, we focus on mask manufacturing contribution on 248 nm and 193 nm lithography performances. The masks are manufactured at DPI using both E-beam/laser writing technologies (e-beam/laser) and two etching processes (wet/dry). Masks are optimized for 150 nm node at wafer scale, neither RET not tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask process being used.
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Alexandra Barberet, Gilles L. Fanget, Jean-Charles Richoilley, Michel Tissier, Yves Quere, "Mask manufacturing contribution on 248-nm and 193-nm lithography performances", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425081; https://doi.org/10.1117/12.425081
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KEYWORDS
Photomasks

Semiconducting wafers

Lithography

Manufacturing

Etching

Scanning electron microscopy

193nm lithography

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