Translator Disclaimer
9 April 2001 Phase defect inspection of 130-nm node phase-shift masks using a simultaneous transmitted and reflected light pattern inspection algorithm
Author Affiliations +
Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425092
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
Phase shifting mask technology will be necessary to product integrated circuits at the 130 nm node using KrF wavelength steppers. In order to successfully accomplish this goal, it is necessary to detect and repair phase shifting defects that may occur in the manufacture of these reticles. An inspection algorithm has been developed to improve the phase shift defect detection rate of an UV reticle inspection system and is based upon the simultaneous use of the transmitted and reflected light signals. This paper describes the phase defect sensitivity improvement over transmitted light only pattern inspection results and simultaneous transmitted and reflected light based contamination inspection results.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry S. Zurbrick, David Emery, Maciej W. Rudzinski, Mark J. Wihl, Michel Prudhomme M.D., Christian Crell, Uwe A. Griesinger, Manuel Vorwerk, and Mario Hennig "Phase defect inspection of 130-nm node phase-shift masks using a simultaneous transmitted and reflected light pattern inspection algorithm", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425092
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top