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9 April 2001 Removal process for buffer layer on multilayer of EUVL mask
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Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425097
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
To obtain a stable pattern profile for the SiO2 buffer layer of an EUVL (Extreme Ultraviolet Lithography) mask, the process latitude available under actual manufacturing conditions was examined by using a conventional spin wet etcher and trying to make the etching depth as uniform as possible. Generally, wet etching uniformity depends on the sequence of the paddling and swing of the etchant nozzle. A uniformity of 1.5%, which meets manufacturing requirements, was found to be obtainable with a special nozzle. This report details a process scheme for removing the buffer layer on the multilayer of an EUVL mask, and presents a method of inspecting the buffer layer along with some simulation results on the printability of residues near the pattern edge.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiichi Hoshino, Taro Ogawa, Masashi Takahashi, Hiromasa Hoko, Hiromasa Yamanashi, Naoya Hirano, Akira Chiba, Byoung Taek Lee, Masaaki Ito, and Shinji Okazaki "Removal process for buffer layer on multilayer of EUVL mask", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425097
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