9 April 2001 Study of mask aerial images to predict CD proximity and line end shortening of resist patterns
Author Affiliations +
Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425089
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany
Abstract
For low-k1 optical lithography, mask effects are more significant than ever before. Also, at low-k1 lithography, mask type, reticle enhancements and exposure illumination conditions interact in a non-linear way, which makes difficult to predict lithography capability from analysis of simulated aerial images. However, it is worth to try using accurate aerial images for prediction of lithography capability, than exposing wafers on today's expensive lithography tools that are used 24 hour a day for production. This paper proposes a method to predict capability of lithography process from measuring mask effects based on the aerial images gathered at NA and coherence settings similar to real exposure conditions and comparing them to printed patterns in resist.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea V. Dusa, Mircea V. Dusa, Judith van Praagh, Judith van Praagh, Andrew Ridley, Andrew Ridley, Bo So, Bo So, } "Study of mask aerial images to predict CD proximity and line end shortening of resist patterns", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425089; https://doi.org/10.1117/12.425089
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT


Back to Top