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23 March 2001 Concentration and power dependencies of level population of 2.8-μm laser transition in YLF:Er crystals under cw laser diode pumping
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Proceedings Volume 4350, Laser Optics 2000: Solid State Lasers; (2001) https://doi.org/10.1117/12.420947
Event: Laser Optics 2000, 2000, St. Petersburg, Russian Federation
Abstract
An influence of inter-ionic cross relaxation processes (up- conversion, self-quenching) on concentration and power dependence's of the inverse population of 4I11/2 and 4I13/2 laser levels in YLF:Er crystals under CW laser-diode pumping were studied both theoretically and experimentally. Computer simulations were carried out taking into account not only pair interaction but also the multi-ion interaction in the whole system. Optimal Er concentration for 3-micrometers CW lasing was estimated as 10- 15%.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra M. Tkachuk, Irene K. Razumova, A. A. Mirzaeva, Georgii E. Novikov, O. A. Orlov, A. V. Malyshev, and V. P. Gapontsev "Concentration and power dependencies of level population of 2.8-μm laser transition in YLF:Er crystals under cw laser diode pumping", Proc. SPIE 4350, Laser Optics 2000: Solid State Lasers, (23 March 2001); https://doi.org/10.1117/12.420947
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