12 March 2001 Synthesis of dispersion-controlled mirror based on the semiconductor materials for near-IR femtosecond lasers
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Abstract
It has been proposed the design of mirrors for near IR femtosecond lasers with given pulse characteristics based on the III-V compound semiconductors using MBE-technologies with reproducible phase parameter due to precise control of the layer parameters. The designed structure of two-part multilayer mirror includes the bottom part with a great number of AlGaAs-pairs and the top several antireflection layers. The specified negative near-constant group delay dispersion can be realized at certain band of spectrum.
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N. D. Goldina, N. D. Goldina, Efim V. Pestryakov, Efim V. Pestryakov, V. I. Trunov, V. I. Trunov, } "Synthesis of dispersion-controlled mirror based on the semiconductor materials for near-IR femtosecond lasers", Proc. SPIE 4352, Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields, (12 March 2001); doi: 10.1117/12.418809; https://doi.org/10.1117/12.418809
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