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9 March 2001 Dynamic operation of laser diode accompanied by hot-carrier effects
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Abstract
We propose a relatively simple dynamic laser model based upon continuity equations for electron and hole concentrations, energy balance equation and a set of rate equations describing spectrally dependent photon density. These equations are solved in a self-consistent way together with Poisson equation. The model assumes that characteristic times of establishing the carrier temperature are shorter than those of carrier-to-phonon interaction. Using this model, the dynamic response of AlGaAs/GaAs double heterostructure laser is analyzed at current densities up to approximately 6 X 104 A/cm2. It is shown that the reaction of carrier temperature to the appearance of optical pulse is spatially nonuniform and is determined by the balance of the heating induced by the stimulated emission and the cooling associated with carrier and heat transfer across the active layer.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris E. Golubev, Vladimir M. Chistyakov, and Serguei A. Gurevich "Dynamic operation of laser diode accompanied by hot-carrier effects", Proc. SPIE 4354, Laser Optics 2000: Semiconductor Lasers and Optical Communication, (9 March 2001); https://doi.org/10.1117/12.418829
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