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22 February 2001 2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417805
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Two X sixty-four linear photodiode arrays on the base of HgCdTe MBE grown layers with CCD silicon readouts were designed, fabricated and tested. It is shown that detectivity for the given arrays even with skimming mode used for long integration times that is need for large square n-p-junctions used and cut-off wavelength of 12.2 micrometer was near the ultimate performance limit.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Vasilyev, Sergey A. Dvoretsky, Dmitrii G. Esaev, T. I. Zahariash, Anatoly G. Klimenko, V. N. Obsyuk, Yuri G. Sidorov, Fiodor F. Sizov, Vladimir P. Reva, Yurii P. Derkach, Sergey G. Korinets, Alexandr G. Golenkov, Sergey D. Darchuk, and Vyacheslav V. Zabudsky "2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417805
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