22 February 2001 4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417777
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Negative luminescence (NL) operation at approximately 4 micrometer is reported for p-InAsSbP/n-InAs reverse biased diodes with efficiency of about 60% (180 degrees Celsius). High NL conversion efficiency (25 mWcm-2A-1, 180 degrees Celsius) and remarkable value of negative apparent temperature ((Delta) T approximately equals -6 degrees Celsius) show advantages of p-InAsSbP/n-InAs NL devices for high temperature applications.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Aidaraliev, Nonna V. Zotova, Sergey A. Karandashev, Boris A. Matveev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, Volodymyr K. Malyutenko, Oleg Yu. Malyutenko, "4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417777; https://doi.org/10.1117/12.417777
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