22 February 2001 Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417807
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Band structure of [100] (CdTe)m/(Cd1-xMnxTe)n superlattices is calculated theoretically in dependence of semiconductor CdTe and Cd1-xMnxTe layers width and magnetic component concentration. Calculations are carried out within semiempirical tight-binding method, which includes s-, p-orbitals of each atom and cation d-orbitals. Mn 3d-states contribution to the formation of the superlattice energy spectrum is analyzed. It is shown that a superlattice on the base of diluted magnetic semiconductor Cd1-xMnxTe with small width of CdTe layers is a semiconductor materials with the similar magnetic properties but with more complicated dependence of crystal forbidden band gap on magnetic component concentration.
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S. V. Melnichuk, Ya. I. Mikhailevski, Ilary M. Rarenko, I. M. Yurijchuk, "Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417807; https://doi.org/10.1117/12.417807
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