22 February 2001 CdTe substrate purification from impurities by gettering
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417793
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
A possibility of CdTe substrate purification from impurities by structure-breakdown layer gettering, formed by laser irradiation, is considered. For profile calculation of diffusive distribution of point defects during heat treatment, and also substrate purification degree after heat treatment, a model, based on diffusion equation with consideration of impurity absorption by dislocations, is proposed. Impurity redistribution task in structure CdTe-CdHgTe during annealing is solved also. Investigations, carried out on specially prepared samples, confirmed CdTe purification effectiveness by gettering: impurity concentration decreased in 5 - 10 times.
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Leonid A. Kosyachenko, Leonid A. Kosyachenko, Z. I. Zakharuk, Z. I. Zakharuk, A. I. Rarenko, A. I. Rarenko, E. S. Nykonyuk, E. S. Nykonyuk, } "CdTe substrate purification from impurities by gettering", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417793; https://doi.org/10.1117/12.417793
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