Compensation in semi-intrinsic CdTe-based materials

Vladimir N. Babentsov; Victoria Corregidor; Jose Luis Castano; Ernesto Dieguez; Michael Fiederle; Tobias Feltgen; Klaus-Werner Benz

doi:10.1117/12.417791

22 February 2001 Compensation in semi-intrinsic CdTe-based materials

Vladimir N. Babentsov, Victoria Corregidor, Jose Luis Castano, Ernesto Dieguez, Michael Fiederle, Tobias Feltgen, Klaus-Werner Benz

Author Affiliations +

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417791
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

In this report a brief review of the semi-intrinsic conductivity phenomenon in doped CdTe:Cl, CdTe:Ga and Cd_{1- x}Zn_xTe materials used for room temperature X and (gamma) -ray detectors is discussed. The upper limit of the resistivity is analyzed in a framework of a general three- levels Fermi-statistic model. The role of the residual impurities and impurity-defect interaction as well as segregation of impurity in Te inclusions are discussed. Dependence of the elementary native defects energy formation on the Fermi-level position in CdTe is shown and some reactions between them are taken into consideration for the Fermi-level stabilization near the middle of the band-gap. On the bases of the Fermi-level stabilization phenomenon it is shown that a self-compensation and a maximum doping level in CdTe:Cl, CdTe:Ga and Cd_1-xZn_xTe depend on the absolute energy of the C (V)-band position. Experimental results of EDAX compositional measurements, photoluminescence are used for illustration of these problems.

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Vladimir N. Babentsov, Victoria Corregidor, Jose Luis Castano, Ernesto Dieguez, Michael Fiederle, Tobias Feltgen, and Klaus-Werner Benz "Compensation in semi-intrinsic CdTe-based materials", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417791

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