Electron-positron annihilation in the narrow-gap semiconductor Hg1-xCdxTe

Andrej P. Kokhanenko; Aleksander G. Korotaev; Aleksander V. Voitsekhovskii

doi:10.1117/12.417779

22 February 2001 Electron-positron annihilation in the narrow-gap semiconductor Hg_1-xCd_xTe

Andrej P. Kokhanenko, Aleksander G. Korotaev, Aleksander V. Voitsekhovskii

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417779
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The angular distribution of the annihilation photons (ADAP) and positron lifetime measurements have been carried out to study of vacancy-type defects in samples of Hg_1-xCd_xTe (MCT). It was found that ADAP curve parameters for as-grown MCT crystal are very different from ones for low defect samples. The values of the annihilation rate in the bulk state and in the V'_Hg trapped state were obtained as 3.55 ns^-1 and 3.13 ns^-1, respectively. The specific positron trapping rate v was estimated to be 5 (DOT) 10^-7 cm³s^-1.

Citation Download Citation

Andrej P. Kokhanenko, Aleksander G. Korotaev, and Aleksander V. Voitsekhovskii "Electron-positron annihilation in the narrow-gap semiconductor Hg_1-xCd_xTe", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417779

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