22 February 2001 Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417771
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The review including personal input of the authors is devoted to the theoretical basis and experimental researches of ferromagnetic and ferroelectrics phase transitions in IV-VI semiconductors. The exclusive role of manganese in promoting of ferromagnetic interaction is shown. The magnetic phenomena in Pb1-XSnXTe doped by manganese and in solid solutions Pb1-X-YSnXMnyTe are outlined. These phenomena include the appearance the exchange thermoelectric power (TP), the additional TP, promoted by electron scattering on magnetic centers, ferromagnetic ordering at high hole concentration by the appearance of anomalous Hall effect and negative resistivity. The theoretical considerations of ferroelectric structural transitions (ST) due to electron- phonon interband interaction and ordering of the dipoles obliged to noncentral ions are outlined. The author's data about the effect of ST on magnetic susceptibility (MS) and TP are described. The first observations of paramagnetic splashes of MS at ST, breaks or bends on TP temperature dependences, the existence of hysteresis phenomena, the influence of the degeneration of electron gas on TP are described. The ideas concerning the applications of diluted magnetic semiconductors in magnetoelectronic devices are outlined.
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George V. Lashkarev, George V. Lashkarev, M. V. Radchenko, M. V. Radchenko, } "Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417771; https://doi.org/10.1117/12.417771
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