22 February 2001 Growth and some properties of tellurium compound whiskers
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417797
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
CdTe, CdXHg1-XTe (x equals 0.1), and PbTe whiskers were grown by chemical transport reaction (CTR) method in closed system. An investigation of growth kinetics and morphology of the whiskers shows that they grow according to both vapor-liquid-solid (VLS) and vapor-crystal (VC) mechanisms. The dependencies of resistivity and photoconductivity on the whisker diameter were found and discussed. Some structure imperfections in the whiskers of large diameters (d > 100 micrometer) are assumed to be present.
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S. S. Varshava, Igor S. Virt, I. P. Ostrovskii, M. F. Bilyk, "Growth and some properties of tellurium compound whiskers", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417797; https://doi.org/10.1117/12.417797
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