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22 February 2001 High infrared sensitivity of n-PbTe(Ga) thin films
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417803
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
We present results of the studies of photoconductivity and transient processes in n-PbTe(Ga) epitaxial films of thickness approximately 0.2 micrometer prepared by the hot wall technique on BaF (formula available in paper) substrates. The photoelectric properties are investigated in the temperature range 4.2 - 300 K under infrared (IR) illumination by GaAs light-emitting diode with (lambda) equals 1 micrometer and by a white light lamp. The low-temperature measurements reveal the IR-photoconductivity threshold at TC approximately equals 150 K (for the flux density (formula available in paper), that exceeds by 40 K and 70 K the temperatures relevant to more thick films (approximately 2 micrometer) and to single crystals, respectively. This substantial increase of TC in thin films gives us an opportunity to estimate the recombination barrier of Ga impurity in PbTe.
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Boris A. Akimov, Vladislav A. Bogoyavlenskiy, Ludmila I. Ryabova, and Vyacheslav N. Vasil'kov "High infrared sensitivity of n-PbTe(Ga) thin films", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417803
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