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22 February 2001 Influence of light hole band nonparabolicity on CdHgTe transport properties
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417774
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The influence of a light hole band nonparabolicity on the transport properties of CdxHg1-xTe and InSb in both intrinsic and extrinsic conductivity regions is investigated. The parameters of heavy and light holes (concentration and mobility) for homogeneous samples of p-CdxHg1-xTe (x equals 0,2 - 0,23) are determined from the Hall coefficient field dependencies. These parameters and similar data for InSb available in the literature have been compared with results of analytical computations based on the recent concepts of material parameters.
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Nicolas N. Berchenko, Igor I. Izhnin, and Yulia S. Ilyina "Influence of light hole band nonparabolicity on CdHgTe transport properties", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417774
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