22 February 2001 Laser-assisted evaporation and deposition of MnxHg1-xTe epitaxial layers
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417799
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
MnxHg1-xTe (x equals 0.1 - 0.13) layers were deposited on CdTe (111) substrates from MnxHg1-xTe (average composition of x equals 0.14) by a pulsed YAG:Nd laser with scanning of the laser beam over the source material. Layers were deposited at different substrate temperatures (from the room temperature to 250 degrees Celsius). It has been established that epitaxial growth of MnxHg1-xTe layers occurs in the narrow range of substrate temperature from 180 to 200 degrees Celsius. As-grown layers are n-type with electron mobility of (mu) equals (0.7-2.8)X103 cm2/Vc and electron concentration of n equals(0.6 - 3.0)X1017 cm-3 at 77K. Thermal treatment in Hg overpressure has been founded to almost unchange the carrier concentration of the layers. The abrupt increase of the carrier mobility (up to 1.5 order of magnitude) is achieved after two-stage heat treatment in Hg overpressure.
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Volodymyr Kavych, Volodymyr Kavych, Leonid G. Mansurov, Leonid G. Mansurov, Mariya Lozynska, Mariya Lozynska, Volodymyr K. Pysarevsky, Volodymyr K. Pysarevsky, } "Laser-assisted evaporation and deposition of MnxHg1-xTe epitaxial layers", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417799; https://doi.org/10.1117/12.417799
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