22 February 2001 Mechanical strain and degradation of laser heterostructures
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417765
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The effect of mechanical strain on degradation processes in GaAs-AlGaAs laser heterostructures (LHS) with stripe geometry and in light emitting diodes (LED) was experimentally studied. The strain was produced either by axial pressure or by indentation with a Wickers pyramid. We show that degradation affects the degree of polarization and the far-field distribution of laser emission. The effect of strain on the degradation intensity is estimated.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Ptashchenko, Alexander A. Ptashchenko, Fedor A. Ptashchenko, Fedor A. Ptashchenko, Natalia V. Maslejeva, Natalia V. Maslejeva, Galina V. Sadova, Galina V. Sadova, } "Mechanical strain and degradation of laser heterostructures", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417765; https://doi.org/10.1117/12.417765
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