22 February 2001 Multilayer coatings as the base for cryogenic infrared filters: technology, peculiarities, and possibilities of application
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417796
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Four main multilayer coatings are manufactured. Different combinations of these coatings allow to solve various tasks connected with the filtration of middle range infrared light. The cut-on coatings are the base of the construction, which divided all spectrum in two different parts: high transmission and full blocking. In order to obtain a cut-on filter with good transmission and rejection characteristics, it was necessary to coat both sides of the substrate. One multilayer serves as the principal high-pass stack and the auxiliary -- to achieve full blocking. The design, manufacture and optimum performance of coatings is discussed. The coatings are composed of PbTe/ZnS symmetric stacks deposited on two sides of a ZnSe(ZnS) or germanium substrate. Transmission characteristics of the different infrared interference filters are presented. It is shown that the set of materials which was chosen for such kind of coatings made it possible to get both steady optics characteristics from room temperature up to 4.2 K, high mechanical and thermal stability, as many property, which we need for cryogenic cooling: to realize stable layer in vacuum; good adhesion; dilatometric compatibility without hydroscopicity. The coatings are very simple. They contain the layers of two materials and final principal multilayers contain only ten layers. The coatings were tested on thermal and mechanical stability.
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Alla I. Belyaeva, Alla I. Belyaeva, } "Multilayer coatings as the base for cryogenic infrared filters: technology, peculiarities, and possibilities of application", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417796; https://doi.org/10.1117/12.417796
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