22 February 2001 Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417795
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The abnormal photoelectric properties of MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrated and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential (between the subelectrode region and the region away from the electrode (after-electrode region) or between different points in subelectrode region) may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.
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Aleksander V. Voitsekhovskii, Aleksander V. Voitsekhovskii, Sergey N. Nesmelov, Sergey N. Nesmelov, N. A. Koulchitskii, N. A. Koulchitskii, } "Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417795; https://doi.org/10.1117/12.417795
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