22 February 2001 Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading
Author Affiliations +
Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417769
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The photocurrent spectra are investigated in Hg1-xCdxTe liquid phase epitaxy (LPE) films and photodiodes of n + -p type on their base with composition gradient. The LPE films were grown on CdTe and CdZnTe single crystal substrates. The transformation of the photocurrent spectra caused by the composition gradient is studied both experimentally and theoretically. The analytical expressions for the spectral dependencies of the photocurrent are derived from the solution of the one-dimensional continuity equation. The calculation of the photocurrent spectra are made in which the nonparabolicity of the energy bands HgCdTe is taking into account.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. F. Ivasiv, Z. F. Ivasiv, Vladimir V. Tetyorkin, Vladimir V. Tetyorkin, } "Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417769; https://doi.org/10.1117/12.417769
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT

InAsSb Strained Layer Superlattices A New Class Of Far...
Proceedings of SPIE (August 14 1988)
IR detector performance in an area array
Proceedings of SPIE (November 27 2000)
Current status of the growth of HgCdTe by molecular beam...
Proceedings of SPIE (December 09 1992)
History of HgCdTe infrared detectors at BAE Systems
Proceedings of SPIE (May 07 2009)

Back to Top