Photosensitivity of porous-silicon-based heterostructures

Liubomyr S. Monastyrskii; Volodymyr P. Savchyn; Petro P. Parandiy

doi:10.1117/12.417763

22 February 2001 Photosensitivity of porous-silicon-based heterostructures

Liubomyr S. Monastyrskii, Volodymyr P. Savchyn, Petro P. Parandiy

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417763
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

It was investigated photosensitivity of double heterostructures. Such double heterostructures were created by pressing and forming optical contact porSi/Si heterostructures and GaSe (d approximately 20 micrometer) thin single crystal substrate. An experimental investigation of GaSe/porSi/Si double heterostructures was connected with current-voltage and photovoltaic effects. It was observed wide band photovoltaic sensitivity from 0.4 to 1.2 micrometer for different heterostructures. Using energy band configuration it was explained obtained curves. GaSe/porSi/Si heterostructure were also high sensitive to mechanical stresses. It was concluded that heterojunction on the basis GaSe/porSi/Si plates may find application as wide-band photoconverters and tensosensitivity devices.

Citation Download Citation

Liubomyr S. Monastyrskii, Volodymyr P. Savchyn, and Petro P. Parandiy "Photosensitivity of porous-silicon-based heterostructures", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417763

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